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  4. Gating Charge Displacement In A Monomeric Voltage-Gated Proton (H(V)1) Channel
 
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Gating Charge Displacement In A Monomeric Voltage-Gated Proton (H(V)1) Channel

Journal
Proceedings of the National Academy of Sciences
Date Issued
2018-08-20
Author(s)
Emerson M. Carmona
H. Peter Larsson
Neely, Alan  
Facultad de Ciencias  
Osvaldo Alvarez
Carlos Gonzalez
Latorre, Ramón  
Facultad de Ciencias  
DOI
10.1073/pnas.1809705115
WoS ID
WOS:000444257200063
Abstract
Significance H v 1 proton channels, since their open probability increases with depolarization and low pH, are fundamental in sustaining the suitable pH gradient for cell survival. Here, we have characterized the gating current elicited by the monomeric mutant proton channel N264R with the aim of understanding the voltage-dependent processes that control channel opening. Gating currents precede ion currents, indicating that a large fraction of gating charge is displaced before H v 1 opening. The voltage sensor displacements are complex and consist of numerous well-defined states. However, most of the charge is displaced in a single transition that probably leads to channel opening. The positively charged arginine in the N264R channel promotes gating charge trapping in addition to blocking the proton currents.
Subjects

Multidisciplinary Sci...

Multidisciplinary

OCDE Subjects

Multidisciplinary

Quartile (Date Issued)
Q1
License
acceso abierto

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